The improvement of the SiO2/InAs interface properties with the aid of fast electron irradiation in a direct current sputter deposition system
Identifieur interne : 000934 ( Russie/Analysis ); précédent : 000933; suivant : 000935The improvement of the SiO2/InAs interface properties with the aid of fast electron irradiation in a direct current sputter deposition system
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Abstract
The improvement of electrophysical parameters of an SiO2/InAs interface were observed during a DC (direct current) sputter deposition of an ITO (indium tin oxide) film. We observed a reduced interface-state density for the ITO/SiO2/InAs structure from 2.5 x 1012 to 5.7 x 1011 cm-2 eV1 with an electron-stimulated modification of a semiconductor-dielectric interface. The built-in positive charge density also decreased from 2.7 × 1012 to 6.7 × 1011 cm 2. Experiments were conducted to verify that the main cause of the improvement was due to electron penetration through the SiO2film into the bulk of the semiconductor crystal lattice. By using a DC sputter deposition for the ITO film, we have presented a new method for the modification of a semiconductor-dielectric interface of a ITO/SiO2/InAs structure.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The improvement of the SiO<sub>2</sub>/InAs interface properties with the aid of fast electron irradiation in a direct current sputter deposition system</title><author><name sortKey="Parm, I O" uniqKey="Parm I">I. O. Parm</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Semiconductor Physics, 13 Lavrentyev Avenue</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>1 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk 630090</wicri:noRegion></affiliation></author><author><name>YONGHAN ROH</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Electrical and Computer Engineering, Sungkyunkwan University, 300 Chunchun-dong</s1><s2>Jangang-gu, Suwon</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Jangang-gu, Suwon</wicri:noRegion></affiliation></author><author><name>BYUNGYOU HONG</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Electrical and Computer Engineering, Sungkyunkwan University, 300 Chunchun-dong</s1><s2>Jangang-gu, Suwon</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Jangang-gu, Suwon</wicri:noRegion></affiliation></author><author><name>CHEON SEOK PARK</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Electrical and Computer Engineering, Sungkyunkwan University, 300 Chunchun-dong</s1><s2>Jangang-gu, Suwon</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Jangang-gu, Suwon</wicri:noRegion></affiliation></author><author><name>JUNSIN YI</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Electrical and Computer Engineering, Sungkyunkwan University, 300 Chunchun-dong</s1><s2>Jangang-gu, Suwon</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Corée du Sud</country><wicri:noRegion>Jangang-gu, Suwon</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0169343</idno><date when="2001">2001</date><idno type="stanalyst">PASCAL 01-0169343 INIST</idno><idno type="RBID">Pascal:01-0169343</idno><idno type="wicri:Area/Main/Corpus">011641</idno><idno type="wicri:Area/Main/Repository">010760</idno><idno type="wicri:Area/Russie/Extraction">000934</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>CV characteristic</term><term>Dielectric properties</term><term>Electrical characteristic</term><term>Electron irradiation</term><term>Electronic structure</term><term>Experimental study</term><term>Indium arsenides</term><term>Interface structure</term><term>MIS structures</term><term>Semiconductor-insulator boundaries</term><term>Silicon oxides</term><term>Sputtered coatings</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Interface semiconducteur isolant</term><term>Revêtement pulvérisation</term><term>Irradiation électron</term><term>Silicium oxyde</term><term>Indium arséniure</term><term>Caractéristique capacité tension</term><term>Caractéristique électrique</term><term>Propriété diélectrique</term><term>Structure électronique</term><term>Structure interface</term><term>Structure MIS</term><term>7340Q</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The improvement of electrophysical parameters of an SiO<sub>2</sub>/InAs interface were observed during a DC (direct current) sputter deposition of an ITO (indium tin oxide) film. We observed a reduced interface-state density for the ITO/SiO<sub>2</sub>/InAs structure from 2.5 x 10<sup>12</sup> to 5.7 x 10<sup>11</sup> cm<sup>-2</sup> eV<sup>1</sup> with an electron-stimulated modification of a semiconductor-dielectric interface. The built-in positive charge density also decreased from 2.7 × 10<sup>12</sup> to 6.7 × 10<sup>11</sup> cm <sup>2</sup>. Experiments were conducted to verify that the main cause of the improvement was due to electron penetration through the SiO<sub>2</sub>film into the bulk of the semiconductor crystal lattice. By using a DC sputter deposition for the ITO film, we have presented a new method for the modification of a semiconductor-dielectric interface of a ITO/SiO<sub>2</sub>/InAs structure.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>172</s2></fA05><fA06><s2>3-4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The improvement of the SiO<sub>2</sub>/InAs interface properties with the aid of fast electron irradiation in a direct current sputter deposition system</s1></fA08><fA11 i1="01" i2="1"><s1>PARM (I. O.)</s1></fA11><fA11 i1="02" i2="1"><s1>YONGHAN ROH</s1></fA11><fA11 i1="03" i2="1"><s1>BYUNGYOU HONG</s1></fA11><fA11 i1="04" i2="1"><s1>CHEON SEOK PARK</s1></fA11><fA11 i1="05" i2="1"><s1>JUNSIN YI</s1></fA11><fA14 i1="01"><s1>Institute of Semiconductor Physics, 13 Lavrentyev Avenue</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>School of Electrical and Computer Engineering, Sungkyunkwan University, 300 Chunchun-dong</s1><s2>Jangang-gu, Suwon</s2><s3>KOR</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>295-300</s1></fA20><fA21><s1>2001</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000097336770140</s5></fA43><fA44><s0>0000</s0><s1>© 2001 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>16 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>01-0169343</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The improvement of electrophysical parameters of an SiO<sub>2</sub>/InAs interface were observed during a DC (direct current) sputter deposition of an ITO (indium tin oxide) film. We observed a reduced interface-state density for the ITO/SiO<sub>2</sub>/InAs structure from 2.5 x 10<sup>12</sup> to 5.7 x 10<sup>11</sup> cm<sup>-2</sup> eV<sup>1</sup> with an electron-stimulated modification of a semiconductor-dielectric interface. The built-in positive charge density also decreased from 2.7 × 10<sup>12</sup> to 6.7 × 10<sup>11</sup> cm <sup>2</sup>. Experiments were conducted to verify that the main cause of the improvement was due to electron penetration through the SiO<sub>2</sub>film into the bulk of the semiconductor crystal lattice. By using a DC sputter deposition for the ITO film, we have presented a new method for the modification of a semiconductor-dielectric interface of a ITO/SiO<sub>2</sub>/InAs structure.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C40Q</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Interface semiconducteur isolant</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Semiconductor-insulator boundaries</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Revêtement pulvérisation</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Sputtered coatings</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Irradiation électron</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Electron irradiation</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Irradiación electrón</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Silicium oxyde</s0><s2>NK</s2><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Silicon oxides</s0><s2>NK</s2><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Caractéristique capacité tension</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>CV characteristic</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Caractéristique électrique</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Electrical characteristic</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Característica eléctrica</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Propriété diélectrique</s0><s5>10</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Dielectric properties</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Structure électronique</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Electronic structure</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Structure interface</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Interface structure</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Structure MIS</s0><s5>13</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>MIS structures</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>7340Q</s0><s2>PAC</s2><s4>INC</s4><s5>92</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>02</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>02</s5></fC07><fN21><s1>113</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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